STW28N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

8 ns

Height :

20.15mm

Pulsed Drain Current-Max (IDM) :

88A

Series :

MDmesh™ II Plus

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1370pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Transistor Element Material :

SILICON

Element Configuration :

Single

Drain to Source Breakdown Voltage :

600V

Turn-Off Delay Time :

100 ns

Rise Time :

7.2ns

Vgs (Max) :

±25V

Width :

5.15mm

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Number of Pins :

3

Weight :

38.000013g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Gate to Source Voltage (Vgs) :

25V

Base Part Number :

STW28N

Factory Lead Time :

16 Weeks

Package / Case :

TO-247-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

170W Tc

ECCN Code :

EAR99

Power Dissipation :

170W

Lead Free :

Lead Free

Length :

15.75mm

Drain Current-Max (Abs) (ID) :

22A

Rds On (Max) @ Id, Vgs :

150m Ω @ 12A, 10V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Number of Channels :

1

Turn On Delay Time :

14.5 ns

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

24A

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

FET Type :

N-Channel

Contact Plating :

Tin