STW27NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

60 ns

FET Type :

N-Channel

Transistor Element Material :

SILICON

Power Dissipation :

160W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

84A

Fall Time (Typ) :

40 ns

Number of Terminations :

3

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Package / Case :

TO-247-3

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

DS Breakdown Voltage-Min :

600V

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

21A

Operating Temperature :

150°C TJ

Turn-Off Delay Time :

50 ns

Drain to Source Voltage (Vdss) :

600V

Gate to Source Voltage (Vgs) :

25V

Base Part Number :

STW27N

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Packaging :

Tube

Radiation Hardening :

No

Rise Time :

30ns

Mount :

Through Hole

Series :

Automotive, AEC-Q101, FDmesh™ II

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Pin Count :

3

Rds On (Max) @ Id, Vgs :

160m Ω @ 10.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

160W Tc

Vgs (Max) :

±25V

Transistor Application :

SWITCHING