STW26NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

54.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1817pF @ 100V

Number of Pins :

3

Drain to Source Breakdown Voltage :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Transistor Application :

SWITCHING

Element Configuration :

Single

Lead Free :

Lead Free

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

84A

Transistor Element Material :

SILICON

Rise Time :

14.5ns

Series :

FDmesh™ II

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

25V

Continuous Drain Current (ID) :

21A

Turn On Delay Time :

22 ns

Height :

20.15mm

Fall Time (Typ) :

27.5 ns

Rds On (Max) @ Id, Vgs :

175m Ω @ 10.5A, 10V

Operating Temperature :

150°C TJ

Power Dissipation-Max :

190W Tc

Turn-Off Delay Time :

69 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Packaging :

Tube

Length :

15.75mm

Vgs (Max) :

±25V

Weight :

38.000013g

Base Part Number :

STW26N

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-247-3

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Width :

5.15mm

Number of Elements :

1