STW26NM60

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Height :

20.15mm

Number of Elements :

1

Turn-Off Delay Time :

85 ns

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Length :

15.75mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Continuous Drain Current (ID) :

20A

Number of Pins :

3

Gate to Source Voltage (Vgs) :

25V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

25ns

Lead Free :

Lead Free

Power Dissipation :

140W

Radiation Hardening :

No

Mount :

Through Hole

Drain to Source Breakdown Voltage :

600V

Packaging :

Tube

FET Type :

N-Channel

Fall Time (Typ) :

50 ns

Mounting Type :

Through Hole

Power Dissipation-Max :

140W Tc

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Width :

5.15mm

Rds On (Max) @ Id, Vgs :

165m Ω @ 10A, 10V

Series :

MDmesh™ II

Element Configuration :

Single

Turn On Delay Time :

13 ns

Contact Plating :

Tin

Base Part Number :

STW26N

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

3V

Transistor Application :

SWITCHING

Pin Count :

3

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

Resistance :

165mOhm

Package / Case :

TO-247-3

Factory Lead Time :

16 Weeks

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 50V

Pulsed Drain Current-Max (IDM) :

80A