STW25NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Threshold Voltage :

4V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

21A

Width :

5.15mm

Avalanche Energy Rating (Eas) :

850 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STW25N

Fall Time (Typ) :

40 ns

Rds On (Max) @ Id, Vgs :

160m Ω @ 10.5A, 10V

Rise Time :

30ns

Package / Case :

TO-247-3

Gate to Source Voltage (Vgs) :

25V

Power Dissipation-Max :

160W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 50V

Mount :

Through Hole

Power Dissipation :

160W

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

20.15mm

Element Configuration :

Single

JESD-609 Code :

e3

Number of Elements :

1

Turn-Off Delay Time :

50 ns

Turn On Delay Time :

60 ns

FET Type :

N-Channel

Number of Pins :

3

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

5V @ 250μA

Vgs (Max) :

±25V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Pin Count :

3

Series :

FDmesh™ II

Pulsed Drain Current-Max (IDM) :

84A

REACH SVHC :

No SVHC

Operating Temperature :

150°C TJ

Packaging :

Tube

Transistor Application :

SWITCHING

Resistance :

160mOhm

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

JEDEC-95 Code :

TO-247AC

Length :

15.75mm

Lead Free :

Lead Free

Number of Terminations :

3

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

600V