STW25NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

20A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

600V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Voltage - Rated DC :

600V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

25V

Series :

MDmesh™ II

Package / Case :

TO-247-3

Number of Elements :

1

ECCN Code :

EAR99

Fall Time (Typ) :

24 ns

Packaging :

Tube

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

21A

Number of Terminations :

3

Power Dissipation :

160W

Vgs (Max) :

±25V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 50V

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

850 mJ

Reach Compliance Code :

not_compliant

Resistance :

160mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Threshold Voltage :

3V

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

160m Ω @ 10.5A, 10V

Turn-Off Delay Time :

94 ns

Rise Time :

18ns

Power Dissipation-Max :

160W Tc

Base Part Number :

STW25N

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

84A