STW25NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

500V

Series :

MDmesh™ II

Resistance :

140mOhm

Fall Time (Typ) :

22 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

160W Tc

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Element Configuration :

Single

Current Rating :

22A

ECCN Code :

EAR99

Package / Case :

TO-247-3

Reach Compliance Code :

not_compliant

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

88A

Rise Time :

23ns

Mounting Type :

Through Hole

FET Type :

N-Channel

JESD-609 Code :

e3

Vgs (Max) :

±25V

Turn-Off Delay Time :

75 ns

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Threshold Voltage :

3V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

140m Ω @ 11A, 10V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Base Part Number :

STW25N

Input Capacitance (Ciss) (Max) @ Vds :

2565pF @ 25V

Power Dissipation :

160W

Mount :

Through Hole

Voltage - Rated DC :

550V

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

25V

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

JEDEC-95 Code :

TO-247AC

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

22A