STW25N95K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

88A

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Resistance :

320mOhm

Drain to Source Breakdown Voltage :

950V

Terminal Finish :

Tin (Sn)

Height :

20.15mm

Turn On Delay Time :

39 ns

Input Capacitance (Ciss) (Max) @ Vds :

3680pF @ 100V

Vgs(th) (Max) @ Id :

5V @ 150μA

Base Part Number :

STW25N

REACH SVHC :

No SVHC

Fall Time (Typ) :

59 ns

Number of Elements :

1

Element Configuration :

Single

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

29ns

Threshold Voltage :

4V

Radiation Hardening :

No

Lead Free :

Lead Free

Packaging :

Tube

Avalanche Energy Rating (Eas) :

450 mJ

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Power Dissipation :

400W

Turn-Off Delay Time :

97 ns

Vgs (Max) :

±30V

Length :

15.75mm

Package / Case :

TO-247-3

Width :

5.15mm

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Continuous Drain Current (ID) :

22A

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Series :

SuperMESH3™

Moisture Sensitivity Level (MSL) :

Not Applicable

Rds On (Max) @ Id, Vgs :

360m Ω @ 11A, 10V

Number of Pins :

3

Mounting Type :

Through Hole

Power Dissipation-Max :

400W Tc

Mount :

Through Hole