STW25N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

250W Tc

Base Part Number :

STW25N

Rds On (Max) @ Id, Vgs :

260m Ω @ 19.5A, 10V

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

800V

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Turn On Delay Time :

25 ns

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Number of Pins :

3

Height :

20.15mm

JESD-609 Code :

e3

Factory Lead Time :

17 Weeks

Length :

15.75mm

Continuous Drain Current (ID) :

19.5A

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

5.15mm

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Number of Terminations :

3

Mount :

Through Hole

Radiation Hardening :

No

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

200 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 100V

Operating Temperature :

-55°C~150°C TJ

Series :

SuperMESH5™

Pulsed Drain Current-Max (IDM) :

78A

Turn-Off Delay Time :

60 ns

Resistance :

260mOhm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Current - Continuous Drain (Id) @ 25°C :

19.5A Tc