STW24NM65N
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- Mfr.Part #
- STW24NM65N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 19A TO247-3
- Stock
- 16,655
- In Stock ：
- 16,655
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 650V
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 76A
- Turn-Off Delay Time :
- 80 ns
- Power Dissipation :
- 160W
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 25 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 20 ns
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- Series :
- MDmesh™ II
- Pin Count :
- 3
- Element Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.19Ohm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 50V
- Gate to Source Voltage (Vgs) :
- 25V
- Continuous Drain Current (ID) :
- 19A
- Base Part Number :
- STW24N
- Rise Time :
- 10ns
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±25V
- Power Dissipation-Max :
- 160W Tc
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSFM-T3
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 500 mJ
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 9.5A, 10V
- Package / Case :
- TO-247-3
- Transistor Application :
- SWITCHING
- Datasheets
- STW24NM65N
N-Channel Tube 190m Ω @ 9.5A, 10V ±25V 2500pF @ 50V 70nC @ 10V TO-247-3
STW24NM65N Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.The maximum input capacitance of this device is 2500pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 19A.When VGS=650V, and ID flows to VDS at 650VVDS, the drain-source breakdown voltage is 650V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 80 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 76A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STW24NM65N Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 76A.
STW24NM65N Applications
There are a lot of STMicroelectronics
STW24NM65N applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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