STW24NK55Z
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- Mfr.Part #
- STW24NK55Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 23A TO247-3
- Stock
- 34,061
- In Stock ：
- 34,061
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 220m Ω @ 11.5A, 10V
- Power Dissipation-Max :
- 285W Tc
- Fall Time (Typ) :
- 88 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Part Number :
- STW24N
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 92A
- Series :
- SuperMESH™
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 23A
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Turn-Off Delay Time :
- 136 ns
- Package / Case :
- TO-247-3
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.22Ohm
- Pin Count :
- 3
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 4397.5pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 35ns
- Power Dissipation :
- 285W
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Avalanche Energy Rating (Eas) :
- 400 mJ
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- 150°C TJ
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 550V
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- STW24NK55Z
N-Channel Tube 220m Ω @ 11.5A, 10V ±30V 4397.5pF @ 25V 130nC @ 10V TO-247-3
STW24NK55Z Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4397.5pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 23A amps.In this device, the drain-source breakdown voltage is 550V and VGS=550V, so the drain-source breakdown voltage is 550V in this case.It is [136 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 92A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STW24NK55Z Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 136 ns
based on its rated peak drain current 92A.
STW24NK55Z Applications
There are a lot of STMicroelectronics
STW24NK55Z applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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