STW24N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Power Dissipation-Max :

150W Tc

Base Part Number :

STW24N

Turn-Off Delay Time :

14 ns

Rise Time :

9ns

Resistance :

190mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 100V

Length :

15.75mm

Factory Lead Time :

16 Weeks

Continuous Drain Current (ID) :

18A

Height :

20.15mm

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

72A

Number of Elements :

1

Transistor Element Material :

SILICON

Vgs (Max) :

±25V

Gate to Source Voltage (Vgs) :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

5.15mm

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

61 ns

Rds On (Max) @ Id, Vgs :

190m Ω @ 9A, 10V

FET Type :

N-Channel

Turn On Delay Time :

14 ns

Drain to Source Breakdown Voltage :

600V

Package / Case :

TO-247-3

Series :

MDmesh™ II Plus

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Power Dissipation :

150W

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Number of Terminations :

3

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Radiation Hardening :

No