STW23NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

Power Dissipation :

150W

Mounting Type :

Through Hole

Packaging :

Tube

Continuous Drain Current (ID) :

19.5A

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Pin Count :

3

Resistance :

180mOhm

Turn On Delay Time :

21 ns

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 50V

Number of Terminations :

3

Fall Time (Typ) :

40 ns

Vgs (Max) :

±25V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

90 ns

Mount :

Through Hole

Series :

FDmesh™ II

Current - Continuous Drain (Id) @ 25°C :

19.5A Tc

Package / Case :

TO-247-3

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Threshold Voltage :

4V

RoHS Status :

ROHS3 Compliant

Base Part Number :

STW23N

Width :

5.15mm

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

Tin (Sn)

Height :

20.15mm

Rds On (Max) @ Id, Vgs :

180m Ω @ 10A, 10V

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

78A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Lead Free :

Lead Free

Number of Pins :

3

Pbfree Code :

yes

Operating Temperature :

150°C TJ

Power Dissipation-Max :

150W Tc

Number of Elements :

1

Rise Time :

45ns

Avalanche Energy Rating (Eas) :

700 mJ

Length :

15.75mm