STW23NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.18ohm

Base Part Number :

STW23N

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Power Dissipation-Max :

150W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Series :

MDmesh™ II

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

600V

Avalanche Energy Rating (Eas) :

700 mJ

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin

Transistor Element Material :

SILICON

Fall Time (Typ) :

36 ns

Pin Count :

3

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 50V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

90 ns

Mount :

Through Hole

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Rise Time :

15ns

Number of Pins :

3

Number of Elements :

1

Continuous Drain Current (ID) :

9.5A

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

25V

Power Dissipation :

150W

Drain Current-Max (Abs) (ID) :

19A

Number of Terminations :

3

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

180m Ω @ 9.5A, 10V

Vgs (Max) :

±25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

76A

FET Type :

N-Channel

Qualification Status :

Not Qualified