STW220NF75
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- Mfr.Part #
- STW220NF75
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 120A TO247-3
- Stock
- 360
- In Stock ：
- 360
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.0044Ohm
- Series :
- STripFET™ II
- Continuous Drain Current (ID) :
- 120A
- Voltage - Rated DC :
- 75V
- Package / Case :
- TO-247-3
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- Lead Free :
- Contains Lead
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 75V
- Rds On (Max) @ Id, Vgs :
- 4.4m Ω @ 60A, 10V
- Turn-Off Delay Time :
- 250 ns
- Radiation Hardening :
- No
- Turn On Delay Time :
- 50 ns
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 12500pF @ 25V
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Element Configuration :
- Single
- Base Part Number :
- STW220
- Fall Time (Typ) :
- 130 ns
- Power Dissipation-Max :
- 500W Tc
- Current Rating :
- 120A
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 430nC @ 10V
- Rise Time :
- 215ns
- Pulsed Drain Current-Max (IDM) :
- 480A
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Matte Tin (Sn)
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 500W
- Datasheets
- STW220NF75
N-Channel Tube 4.4m Ω @ 60A, 10V ±20V 12500pF @ 25V 430nC @ 10V TO-247-3
STW220NF75 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 12500pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 75V and VGS=75V, so the drain-source breakdown voltage is 75V in this case.It is [250 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 480A.A turn-on delay time of 50 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STW220NF75 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 250 ns
based on its rated peak drain current 480A.
STW220NF75 Applications
There are a lot of STMicroelectronics
STW220NF75 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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