STW21NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±25V

Transistor Element Material :

SILICON

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 50V

Packaging :

Tube

Power Dissipation-Max :

140W Tc

JESD-609 Code :

e3

Number of Terminations :

3

Base Part Number :

STW21N

Rise Time :

16ns

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

18 ns

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

68A

REACH SVHC :

No SVHC

Length :

15.75mm

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Width :

5.15mm

Fall Time (Typ) :

48 ns

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Power Dissipation :

140W

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Breakdown Voltage :

600V

FET Type :

N-Channel

Height :

20.15mm

Turn-Off Delay Time :

70 ns

Threshold Voltage :

4V

Radiation Hardening :

No

ECCN Code :

EAR99

Resistance :

220mOhm

Series :

FDmesh™ II

Gate to Source Voltage (Vgs) :

25V

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

220m Ω @ 8.5A, 10V

Factory Lead Time :

42 Weeks

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

17A

Package / Case :

TO-247-3

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Element Configuration :

Single