STW21N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Rise Time :

10ns

Vgs (Max) :

±25V

Packaging :

Tube

Turn-Off Delay Time :

12 ns

Mount :

Through Hole

Package / Case :

TO-247-3

FET Type :

N-Channel

Continuous Drain Current (ID) :

17A

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Power Dissipation :

125W

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 100V

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

68A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

REACH SVHC :

No SVHC

Resistance :

190mOhm

ECCN Code :

EAR99

Threshold Voltage :

4V

Number of Terminations :

3

Mounting Type :

Through Hole

Pbfree Code :

yes

Fall Time (Typ) :

24 ns

Drain to Source Breakdown Voltage :

650V

Gate to Source Voltage (Vgs) :

25V

Base Part Number :

STW21N

Operating Mode :

ENHANCEMENT MODE

Width :

5.15mm

Height :

20.15mm

Number of Pins :

3

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Series :

MDmesh™ V

Length :

15.75mm

Operating Temperature :

150°C TJ

Power Dissipation-Max :

125W Tc

Rds On (Max) @ Id, Vgs :

190m Ω @ 8.5A, 10V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

400 mJ