STP7NM80

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Length :

10.4mm

JESD-609 Code :

e3

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Height :

15.75mm

Width :

4.6mm

Radiation Hardening :

No

REACH SVHC :

No SVHC

Series :

MDmesh™

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 3.25A, 10V

Avalanche Energy Rating (Eas) :

240 mJ

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

Drain to Source Breakdown Voltage :

800V

Number of Pins :

3

Threshold Voltage :

4V

Rise Time :

8ns

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Continuous Drain Current (ID) :

3.25A

Power Dissipation-Max :

90W Tc

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Element Configuration :

Single

Packaging :

Tube

Base Part Number :

STP7N

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

6.5A

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

35 ns

Turn On Delay Time :

20 ns

Pulsed Drain Current-Max (IDM) :

26A

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Through Hole

Number of Terminations :

3

Vgs (Max) :

±30V

Power Dissipation :

90W

Resistance :

1.05Ohm

Fall Time (Typ) :

10 ns

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99