STP76NF75
- Mfr.Part #
- STP76NF75
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 80A TO220
- Stock
- 34,752
- In Stock :
- 34,752
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 300W
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Base Part Number :
- STP76N
- JEDEC-95 Code :
- TO-220AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Turn On Delay Time :
- 25 ns
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 40A, 10V
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSFM-T3
- Fall Time (Typ) :
- 30 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Drain to Source Breakdown Voltage :
- 75V
- Factory Lead Time :
- 12 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 160nC @ 10V
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 3700pF @ 25V
- Series :
- STripFET™ II
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 66 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Through Hole
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 80A
- Pulsed Drain Current-Max (IDM) :
- 320A
- Element Configuration :
- Single
- Rise Time :
- 100ns
- Power Dissipation-Max :
- 300W Tc
- Datasheets
- STP76NF75

N-Channel Tube 11m Ω @ 40A, 10V ±20V 3700pF @ 25V 160nC @ 10V TO-220-3
STP76NF75 Description
The STP76NF75 Power MOSFET is the latest advancement in STMicroelectronics' proprietary "single feature size" strip-based technique. The resultant transistor has a remarkable manufacturing reproducibility because to its extremely high packing density for low on-resistance, tough avalanche properties, and less essential alignment stages.
STP76NF75 Features
-
Exceptional dv/dt capability
-
100% avalanche tested
STP76NF75 Applications
-
Switching applications
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