STP75NS04Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Rds On (Max) @ Id, Vgs :

11m Ω @ 40A, 10V

Power Dissipation-Max :

110W Tc

Number of Pins :

3

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

470 mJ

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Rise Time :

248ns

Continuous Drain Current (ID) :

80A

Turn-Off Delay Time :

53 ns

Turn On Delay Time :

16 ns

Height :

15.75mm

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

FET Type :

N-Channel

Mounting Type :

Through Hole

Element Configuration :

Single

Base Part Number :

STP75N

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.6mm

Power Dissipation :

110W

Resistance :

11mOhm

Terminal Finish :

Tin (Sn)

Series :

MESH OVERLAY™ III

Drain to Source Breakdown Voltage :

33V

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1860pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Number of Terminations :

3

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Length :

10.4mm

Fall Time (Typ) :

85 ns

Vgs(th) (Max) @ Id :

4V @ 250µA