STP75

Manufacturer :

Banner Engineering

Product Category :

Threshold Voltage :

3V

Resistance :

11mOhm

Voltage - Rated DC :

75V

Operating Temperature :

-55°C~175°C TJ

Length :

10.4mm

Rds On (Max) @ Id, Vgs :

11m Ω @ 40A, 10V

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

700 mJ

Rise Time :

100ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

80A

Element Configuration :

Single

Turn On Delay Time :

25 ns

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

JESD-609 Code :

e3

Weight :

9.071847g

Series :

STripFET™ II

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

Transistor Element Material :

SILICON

Number of Elements :

1

Number of Terminations :

3

Fall Time (Typ) :

30 ns

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

Width :

4.6mm

Power Dissipation-Max :

300W Tc

Package / Case :

TO-220-3

Factory Lead Time :

12 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Vgs (Max) :

±20V

Case Connection :

DRAIN

Power Dissipation :

300W

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

80A Tc

ECCN Code :

EAR99

Height :

9.15mm

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

80A

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STP75N

Turn-Off Delay Time :

66 ns

Mount :

Through Hole

Drain Current-Max (Abs) (ID) :

75A

Packaging :

Tube

Pin Count :

3

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

75V

Terminal Finish :

Tin (Sn)