STP75N3LLH6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 37.5A, 10V

Number of Terminations :

3

Mount :

Through Hole

Package / Case :

TO-220-3

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

75A

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

300A

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

30V

Base Part Number :

STP75N

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

FET Type :

N-Channel

Turn-Off Delay Time :

37 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

60W Tc

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Series :

DeepGATE™, STripFET™ VI

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

23.8nC @ 4.5V

Packaging :

Tube

Power Dissipation :

60W

Turn On Delay Time :

9.5 ns

Radiation Hardening :

No

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2030pF @ 25V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Pin Count :

3

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0084Ohm

Fall Time (Typ) :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Rise Time :

30ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB