STP70N10F4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Mounting Type :

Through Hole

Radiation Hardening :

No

Power Dissipation :

150W

FET Type :

N-Channel

Element Configuration :

Single

Number of Pins :

3

Turn On Delay Time :

30 ns

Resistance :

19.5MOhm

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

Rise Time :

20ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

DeepGATE™, STripFET™

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

100V

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

19.5m Ω @ 30A, 10V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

65A Tc

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

65A

Pulsed Drain Current-Max (IDM) :

260A

Vgs(th) (Max) @ Id :

4V @ 250µA

Contact Plating :

Tin

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STP70N

Mount :

Through Hole

Turn-Off Delay Time :

65 ns

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

Not Applicable

Fall Time (Typ) :

20 ns

Power Dissipation-Max :

150W Tc

Package / Case :

TO-220-3

Packaging :

Tube

Number of Terminations :

3