STP75N20
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- Mfr.Part #
- STP75N20
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 75A TO220AB
- Stock
- 13,265
- In Stock ：
- 13,265
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-220AB
- Avalanche Energy Rating (Eas) :
- 205 mJ
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.034Ohm
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 75A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Series :
- STripFET™
- Drain to Source Breakdown Voltage :
- 200V
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 29 ns
- Turn-Off Delay Time :
- 75 ns
- Number of Elements :
- 1
- Rise Time :
- 33ns
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 300A
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 37A, 10V
- Turn On Delay Time :
- 53 ns
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Voltage - Rated DC :
- 200V
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 3260pF @ 25V
- FET Type :
- N-Channel
- Base Part Number :
- STP75N
- Terminal Finish :
- Tin
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 190W
- Power Dissipation-Max :
- 190W Tc
- Packaging :
- Tube
- Current Rating :
- 75A
- Lead Free :
- Lead Free
- Package / Case :
- TO-220-3
- Datasheets
- STP75N20
STP75N20 Documents
N-Channel Tube 34m Ω @ 37A, 10V ±20V 3260pF @ 25V 84nC @ 10V TO-220-3
STP75N20 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 205 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3260pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 75A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 75 ns.Peak drain current is 300A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 53 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STP75N20 Features
the avalanche energy rating (Eas) is 205 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 300A.
STP75N20 Applications
There are a lot of STMicroelectronics
STP75N20 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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