STP77N6F6

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Mfr.Part #
STP77N6F6
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 60V 77A TO220
Stock
79,033
In Stock :
79,033

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Base Part Number :
STP77N
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
60V
Power Dissipation :
80W
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
76nC @ 10V
Package / Case :
TO-220-3
Power Dissipation-Max :
80W Tc
Lead Free :
Lead Free
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
7m Ω @ 38.5A, 10V
Number of Elements :
1
Series :
DeepGATE™, STripFET™ VI
Operating Temperature :
-55°C~175°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Vgs (Max) :
±20V
Radiation Hardening :
No
Continuous Drain Current (ID) :
77A
Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
5300pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
77A Tc
Mount :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
ECCN Code :
EAR99
Datasheets
STP77N6F6
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STP77N6F6 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STP77N, Package / Case:TO-220-3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, STP77N6F6 pinout, STP77N6F6 datasheet PDF, STP77N6F6 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STP77N6F6 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STP77N6F6


N-Channel Tube 7m Ω @ 38.5A, 10V ±20V 5300pF @ 25V 76nC @ 10V TO-220-3

STP77N6F6 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).

STP77N6F6 Features


a continuous drain current (ID) of 77A
a drain-to-source breakdown voltage of 60V voltage


STP77N6F6 Applications


There are a lot of STMicroelectronics
STP77N6F6 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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