STP7NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

45W

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Turn-Off Delay Time :

40 ns

Element Configuration :

Single

Vgs (Max) :

±25V

Mount :

Through Hole

Qualification Status :

Not Qualified

Package / Case :

TO-220-3

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Series :

MDmesh™ II

Continuous Drain Current (ID) :

5A

Drain to Source Breakdown Voltage :

500V

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 50V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Power Dissipation-Max :

45W Tc

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Pin Count :

3

Number of Pins :

3

Number of Terminations :

3

Mounting Type :

Through Hole

Base Part Number :

STP7N

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

780m Ω @ 2.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

5A

Pulsed Drain Current-Max (IDM) :

20A

Number of Elements :

1

Drain-source On Resistance-Max :

0.78Ohm

Fall Time (Typ) :

9 ns

Gate to Source Voltage (Vgs) :

25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Rise Time :

5ns

Operating Mode :

ENHANCEMENT MODE