STP7NK80ZFP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

20 ns

Lead Free :

Lead Free

Case Connection :

Isolated

Number of Elements :

1

Package / Case :

TO-220-3 Full Pack

JESD-609 Code :

e3

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Resistance :

1.8Ohm

Threshold Voltage :

3.75V

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

5.2A Tc

Number of Pins :

3

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

20.8A

Turn-Off Delay Time :

45 ns

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Base Part Number :

STP7N

Width :

4.6mm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

30W

FET Type :

N-Channel

Series :

SuperMESH™

Weight :

4.535924g

Continuous Drain Current (ID) :

5.2A

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1138pF @ 25V

Mount :

Through Hole

Length :

10.4mm

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Terminal Finish :

Matte Tin (Sn) - annealed

Power Dissipation-Max :

30W Tc

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Rise Time :

12ns

Height :

9.3mm

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 2.6A, 10V

Turn On Delay Time :

20 ns

Packaging :

Tube

Drain to Source Breakdown Voltage :

800V