STP7NK80Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 2.6A, 10V

Packaging :

Tube

Vgs (Max) :

±30V

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn) - annealed

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

1138pF @ 25V

Lead Free :

Lead Free

Width :

4.6mm

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Turn-Off Delay Time :

45 ns

Pulsed Drain Current-Max (IDM) :

20.8A

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Base Part Number :

STP7N

Current - Continuous Drain (Id) @ 25°C :

5.2A Tc

Mount :

Through Hole

Rise Time :

12ns

Power Dissipation :

125W

Number of Pins :

3

Element Configuration :

Single

Current Rating :

5.2A

Radiation Hardening :

No

Number of Terminations :

3

Voltage - Rated DC :

800V

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Length :

10.4mm

Continuous Drain Current (ID) :

5.2A

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Fall Time (Typ) :

20 ns

Drain to Source Breakdown Voltage :

800V

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Number of Elements :

1

Height :

9.15mm

Threshold Voltage :

3.75V

Package / Case :

TO-220-3

Power Dissipation-Max :

125W Tc

JESD-609 Code :

e3

Series :

SuperMESH™

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

20 ns