STP7N95K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

23 ns

Avalanche Energy Rating (Eas) :

220 mJ

Transistor Application :

SWITCHING

Height :

15.75mm

Rise Time :

9ns

Number of Terminations :

3

Turn On Delay Time :

14 ns

Current - Continuous Drain (Id) @ 25°C :

7.2A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1031pF @ 100V

Threshold Voltage :

4V

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STP7N

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Width :

4.6mm

Number of Elements :

1

Packaging :

Tube

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

7.2A

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 100µA

Drain to Source Breakdown Voltage :

950V

Length :

10.4mm

Power Dissipation :

150W

Radiation Hardening :

No

Lead Free :

Lead Free

Pin Count :

3

Resistance :

1.35Ohm

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

28.8A

Package / Case :

TO-220-3

Power Dissipation-Max :

150W Tc

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Series :

SuperMESH3™

Turn-Off Delay Time :

36 ns

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

1.35 Ω @ 3.6A, 10V

Transistor Element Material :

SILICON

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V