STP7N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Number of Terminations :

3

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

6A

Rise Time :

8.3ns

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 100V

Mount :

Through Hole

Height :

15.75mm

Turn On Delay Time :

11.3 ns

Number of Elements :

1

Fall Time (Typ) :

20.2 ns

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 100µA

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

110W Tc

Avalanche Energy Rating (Eas) :

88 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Package / Case :

TO-220-3

Packaging :

Tube

Element Configuration :

Single

Width :

4.6mm

Series :

SuperMESH5™

Length :

10.4mm

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

FET Type :

N-Channel

Power Dissipation :

110W

Continuous Drain Current (ID) :

6A

Pulsed Drain Current-Max (IDM) :

24A

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

23.7 ns

Gate Charge (Qg) (Max) @ Vgs :

13.4nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

17 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

800V

Base Part Number :

STP7N

Lead Free :

Lead Free