STP7N60M2

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Mfr.Part #
STP7N60M2
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 5A TO220
Stock
34,656
In Stock :
34,656

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Base Part Number :
STP7N
Mount :
Through Hole
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Series :
MDmesh™ II Plus
Radiation Hardening :
No
Resistance :
950mOhm
Gate Charge (Qg) (Max) @ Vgs :
8.8nC @ 10V
Pulsed Drain Current-Max (IDM) :
20A
Rise Time :
7.2ns
Case Connection :
DRAIN
Packaging :
Tube
Number of Channels :
1
Turn On Delay Time :
7.6 ns
Drain to Source Breakdown Voltage :
600V
Factory Lead Time :
16 Weeks
Length :
10.4mm
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
4V @ 250µA
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Lead Free :
Lead Free
Continuous Drain Current (ID) :
5A
Power Dissipation-Max :
60W Tc
Number of Elements :
1
Avalanche Energy Rating (Eas) :
99 mJ
Input Capacitance (Ciss) (Max) @ Vds :
271pF @ 100V
Turn-Off Delay Time :
19.3 ns
Threshold Voltage :
3V
Fall Time (Typ) :
15.9 ns
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
25V
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Package / Case :
TO-220-3
Rds On (Max) @ Id, Vgs :
950m Ω @ 2.5A, 10V
Number of Pins :
3
Mounting Type :
Through Hole
Vgs (Max) :
±25V
Operating Mode :
ENHANCEMENT MODE
Width :
4.6mm
Height :
15.75mm
Current - Continuous Drain (Id) @ 25°C :
5A Tc
Transistor Application :
SWITCHING
JEDEC-95 Code :
TO-220AB
REACH SVHC :
No SVHC
Drain Current-Max (Abs) (ID) :
5A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
STP7N60M2
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STP7N60M2 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STP7N, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, STP7N60M2 pinout, STP7N60M2 datasheet PDF, STP7N60M2 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STP7N60M2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STP7N60M2


N-Channel Tube 950m Ω @ 2.5A, 10V ±25V 271pF @ 100V 8.8nC @ 10V TO-220-3

STP7N60M2 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 99 mJ.The maximum input capacitance of this device is 271pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 5A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 5A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 19.3 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 20A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 7.6 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

STP7N60M2 Features


the avalanche energy rating (Eas) is 99 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19.3 ns
based on its rated peak drain current 20A.
a threshold voltage of 3V


STP7N60M2 Applications


There are a lot of STMicroelectronics
STP7N60M2 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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