STP7N52K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

ECCN Code :

EAR99

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Continuous Drain Current (ID) :

6.2A

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Width :

4.6mm

Drain to Source Breakdown Voltage :

525V

Radiation Hardening :

No

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Power Dissipation :

90W

Mounting Type :

Through Hole

Pin Count :

3

Base Part Number :

STP7N

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

30V

Threshold Voltage :

3.75V

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

737pF @ 100V

Resistance :

850mOhm

Packaging :

Tube

Transistor Application :

SWITCHING

Height :

15.75mm

Package / Case :

TO-220-3

Turn On Delay Time :

11 ns

Factory Lead Time :

12 Weeks

Number of Terminations :

3

Length :

10.4mm

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Series :

SuperMESH3™

Fall Time (Typ) :

19 ns

Pulsed Drain Current-Max (IDM) :

25A

Power Dissipation-Max :

90W Tc

Turn-Off Delay Time :

36 ns

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

980m Ω @ 3.1A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Rise Time :

11ns

FET Type :

N-Channel