STP7N52DK3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Number of Elements :

1

Rise Time :

33ns

Additional Feature :

ULTRA-LOW RESISTANCE

JESD-609 Code :

e3

Resistance :

1.15Ohm

Pulsed Drain Current-Max (IDM) :

24A

Height :

15.75mm

Lead Free :

Lead Free

Length :

10.4mm

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

1.15 Ω @ 3A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 50V

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

100 mJ

Turn-Off Delay Time :

37 ns

Continuous Drain Current (ID) :

6A

Package / Case :

TO-220-3

Series :

SuperFREDmesh3™

Transistor Application :

SWITCHING

Width :

4.6mm

Drain to Source Voltage (Vdss) :

525V

Base Part Number :

STP7N

Fall Time (Typ) :

4.2 ns

Turn On Delay Time :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

6A

JEDEC-95 Code :

TO-220AB

Drain to Source Breakdown Voltage :

620V

Gate to Source Voltage (Vgs) :

30V

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Threshold Voltage :

3.75V

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Power Dissipation-Max :

90W Tc

Number of Terminations :

3

Packaging :

Tube

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

90W

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Radiation Hardening :

No

Mount :

Through Hole