STP7N105K5
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- Mfr.Part #
- STP7N105K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1050V 4A TO220
- Stock
- 463
- In Stock ：
- 463
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 110W Tc
- Max Junction Temperature (Tj) :
- 150°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 110W
- Drain Current-Max (Abs) (ID) :
- 4A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 2A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Series :
- SuperMESH5™
- Height :
- 19.68mm
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 17.5 ns
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 1.05kV
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Mounting Type :
- Through Hole
- Base Part Number :
- STP7N
- Input Capacitance (Ciss) (Max) @ Vds :
- 380pF @ 100V
- Turn-Off Delay Time :
- 43 ns
- Number of Channels :
- 1
- Factory Lead Time :
- 17 Weeks
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 1050V
- Configuration :
- Single
- Continuous Drain Current (ID) :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Datasheets
- STP7N105K5
N-Channel Tube 2 Ω @ 2A, 10V ±30V 380pF @ 100V 17nC @ 10V 1050V TO-220-3
STP7N105K5 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 380pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1.05kV, and this device has a drainage-to-source breakdown voltage of 1.05kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 4A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 43 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 1050V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STP7N105K5 Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 1.05kV voltage
the turn-off delay time is 43 ns
a 1050V drain to source voltage (Vdss)
STP7N105K5 Applications
There are a lot of STMicroelectronics
STP7N105K5 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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