STP1N105K3
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- Mfr.Part #
- STP1N105K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1050V 1.4A TO220
- Stock
- 1,625
- In Stock ：
- 1,625
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Configuration :
- Single
- Power Dissipation-Max :
- 60W Tc
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 1.4A
- Base Part Number :
- STP1N
- Rise Time :
- 7ns
- Power Dissipation :
- 60W
- Package / Case :
- TO-220-3
- Vgs (Max) :
- ±30V
- Resistance :
- 11Ohm
- Drain to Source Voltage (Vdss) :
- 1050V
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 1.4A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 27 ns
- Drain to Source Breakdown Voltage :
- 1.05kV
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 50 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 11 Ω @ 600mA, 10V
- Series :
- SuperMESH3™
- Turn On Delay Time :
- 6 ns
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 180pF @ 100V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Datasheets
- STP1N105K3
N-Channel Tube 11 Ω @ 600mA, 10V ±30V 180pF @ 100V 13nC @ 10V 1050V TO-220-3
STP1N105K3 Overview
A device's maximal input capacitance is 180pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1.4A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1.05kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 27 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 1050V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
STP1N105K3 Features
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 1.05kV voltage
the turn-off delay time is 27 ns
a 1050V drain to source voltage (Vdss)
STP1N105K3 Applications
There are a lot of STMicroelectronics
STP1N105K3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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