STP10N80K5
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- Mfr.Part #
- STP10N80K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 9A TO220
- Stock
- 50
- In Stock ：
- 50
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3
- Drain to Source Voltage (Vdss) :
- 800V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Series :
- MDmesh™ K5
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Reach Compliance Code :
- Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Vgs (Max) :
- ±30V
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 17 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 635pF @ 100V
- Power Dissipation-Max :
- 130W Tc
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 4.5A, 10V
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Datasheets
- STP10N80K5
N-Channel 600m Ω @ 4.5A, 10V ±30V 635pF @ 100V 22nC @ 10V 800V TO-220-3
STP10N80K5 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 635pF @ 100V.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
STP10N80K5 Features
a 800V drain to source voltage (Vdss)
STP10N80K5 Applications
There are a lot of STMicroelectronics
STP10N80K5 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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