STP10N95K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 100µA

Turn On Delay Time :

22 ns

Weight :

329.988449mg

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

800m Ω @ 4A, 10V

Turn-Off Delay Time :

51 ns

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 100V

Fall Time (Typ) :

15 ns

Series :

SuperMESH5™

Number of Pins :

3

Rise Time :

14ns

Factory Lead Time :

17 Weeks

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

8A

Drain to Source Breakdown Voltage :

950V

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

130W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-220-3

Packaging :

Tube

Number of Terminations :

3

FET Type :

N-Channel

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.8Ohm

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Length :

10.4mm

Drain Current-Max (Abs) (ID) :

8A

Case Connection :

DRAIN

Number of Channels :

1

Base Part Number :

STP10

Width :

4.6mm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

130W

Height :

15.75mm