STP100N6F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

STripFET™ F7

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

400A

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STP100

Power Dissipation-Max :

125W Tc

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

200 mJ

Continuous Drain Current (ID) :

100A

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Packaging :

Tube

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Mount :

Through Hole

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

60V

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 50A, 10V

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0056Ohm

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Vgs (Max) :

±20V

Factory Lead Time :

22 Weeks

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1980pF @ 25V

Number of Elements :

1

ECCN Code :

EAR99