STP10NK60Z
- Mfr.Part #
- STP10NK60Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A TO220AB
- Stock
- 12,311
- In Stock :
- 12,311
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-220AB
- Lead Free :
- Lead Free
- Base Part Number :
- STP10
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 30 ns
- Vgs (Max) :
- ±30V
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- JESD-609 Code :
- e3
- Current Rating :
- 10A
- REACH SVHC :
- No SVHC
- Rise Time :
- 20ns
- Drain to Source Breakdown Voltage :
- 600V
- Terminal Finish :
- Matte Tin (Sn)
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3
- Turn-Off Delay Time :
- 55 ns
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Series :
- SuperMESH™
- Threshold Voltage :
- 3.75V
- Element Configuration :
- Single
- Mount :
- Through Hole
- Power Dissipation :
- 115W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Continuous Drain Current (ID) :
- 10A
- Voltage - Rated DC :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Height :
- 9.15mm
- Resistance :
- 750mOhm
- Packaging :
- Tube
- FET Type :
- N-Channel
- Width :
- 4.6mm
- Factory Lead Time :
- 12 Weeks
- Length :
- 10.4mm
- Gate to Source Voltage (Vgs) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Turn On Delay Time :
- 20 ns
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 115W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1370pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 750m Ω @ 4.5A, 10V
- Datasheets
- STP10NK60Z

N-Channel Tube 750m Ω @ 4.5A, 10V ±30V 1370pF @ 25V 70nC @ 10V TO-220-3
Description
The STP10NK60Z is a 600 V, 0.65 Ωtyp., 10 A N-channel SuperMESHTM Power MOSFET available in I2PAK, D2PAK, TO-220, TO-220FP, and TO-247 packages. These are N-channel Zener-protected Power MOSFETs made with STMicroelectronics' SuperMESHTM technology, which was developed by optimizing ST's well-known strip-based PowerMESHTM layout. This device is built to provide a high level of dv/dt capabilities for the most demanding applications, in addition to a significant reduction in on-resistance.
Features
-
Gate charge minimized
-
Zener-protected
-
Extremely high dv/dt capability
-
100% avalanche tested
-
Operate at lower voltages
Applications
-
Switching applications
-
Switch Mode Power Supplies (SMPS)
-
Power-Over-Ethernet (PoE)
-
Solar inverters
-
Automotive applications
-
Switch, buck and synchronous rectification
-
Uninterruptible Power Supplies (UPS)
-
Small motor control
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