STP100N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

46 ns

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Rise Time :

40ns

Power Dissipation :

150W

Series :

DeepGATE™, STripFET™ VII

Avalanche Energy Rating (Eas) :

400 mJ

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Fall Time (Typ) :

16 ns

Current - Continuous Drain (Id) @ 25°C :

80A Tc

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Height :

15.75mm

Width :

4.6mm

Factory Lead Time :

13 Weeks

Vgs (Max) :

±20V

Turn On Delay Time :

27 ns

Mounting Type :

Through Hole

Base Part Number :

STP100

Number of Elements :

1

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

8m Ω @ 40A, 10V

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Threshold Voltage :

4.5V

Element Configuration :

Single

Length :

10.4mm

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

80A

Packaging :

Tube

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

100V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Resistance :

8mOhm

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

4369pF @ 50V

Number of Terminations :

3

Mount :

Through Hole

Power Dissipation-Max :

150W Tc