STP10N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Continuous Drain Current (ID) :

8.4A

Turn-Off Delay Time :

41 ns

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 50V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

750m Ω @ 4A, 10V

Number of Elements :

1

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Power Dissipation-Max :

125W Tc

Rise Time :

15ns

Drain to Source Voltage (Vdss) :

620V

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Threshold Voltage :

3.75V

Power Dissipation :

125W

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Series :

SuperMESH3™

JEDEC-95 Code :

TO-220AB

Nominal Vgs :

3.75 V

Package / Case :

TO-220-3

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

8.4A Tc

Transistor Application :

SWITCHING

Resistance :

680mOhm

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Terminal Position :

Single

Base Part Number :

STP10

Mount :

Through Hole

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

650V

Fall Time (Typ) :

31 ns

Length :

10.4mm

Avalanche Energy Rating (Eas) :

220 mJ

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

14.5 ns

Number of Terminations :

3

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Height :

15.75mm

Width :

4.6mm