STP10NK50Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Rated DC :

500V

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Input Capacitance (Ciss) (Max) @ Vds :

1219pF @ 25V

Mount :

Through Hole

Mounting Type :

Through Hole

Reach Compliance Code :

not_compliant

Rise Time :

17ns

ECCN Code :

EAR99

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

700m Ω @ 4.5A, 10V

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

9A

Continuous Drain Current (ID) :

9A

Base Part Number :

STP10

Avalanche Energy Rating (Eas) :

230 mJ

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Series :

SuperMESH™

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±30V

Power Dissipation :

125W

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Pulsed Drain Current-Max (IDM) :

36A

Package / Case :

TO-220-3

Power Dissipation-Max :

125W Tc

Current Rating :

9A

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

39.2nC @ 10V

JESD-30 Code :

R-PSFM-T3

Turn-Off Delay Time :

43 ns

Drain-source On Resistance-Max :

0.7Ohm

Drain to Source Breakdown Voltage :

500V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

FET Type :

N-Channel

Element Configuration :

Single

Fall Time (Typ) :

15 ns

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE