STP19NM65N
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- Mfr.Part #
- STP19NM65N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 15.5A TO220AB
- Stock
- 29,993
- In Stock ：
- 29,993
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 15.5A
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 62A
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Power Dissipation :
- 150W
- Base Part Number :
- STP19N
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Fall Time (Typ) :
- 26 ns
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn On Delay Time :
- 25 ns
- Turn-Off Delay Time :
- 80 ns
- JESD-30 Code :
- R-PSFM-T3
- Drain to Source Breakdown Voltage :
- 650V
- Radiation Hardening :
- No
- Rise Time :
- 8ns
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 7.75A, 10V
- Avalanche Energy Rating (Eas) :
- 400 mJ
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-220AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900pF @ 50V
- Number of Elements :
- 1
- Vgs (Max) :
- ±25V
- Resistance :
- 270mOhm
- Gate to Source Voltage (Vgs) :
- 25V
- Terminal Finish :
- Tin (Sn)
- Power Dissipation-Max :
- 150W Tc
- Mount :
- Through Hole
- Series :
- MDmesh™ II
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 10V
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 15.5A Tc
- ECCN Code :
- EAR99
- Datasheets
- STP19NM65N
N-Channel Tube 270m Ω @ 7.75A, 10V ±25V 1900pF @ 50V 55nC @ 10V TO-220-3
STP19NM65N Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 400 mJ.A device's maximum input capacitance is 1900pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Its maximum pulsed drain current is 62A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STP19NM65N Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 15.5A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 62A.
STP19NM65N Applications
There are a lot of STMicroelectronics
STP19NM65N applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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