STP19NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

17 ns

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 50V

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Turn On Delay Time :

12 ns

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Series :

MDmesh™ II

Power Dissipation :

110W

Number of Terminations :

3

Threshold Voltage :

3V

Power Dissipation-Max :

110W Tc

Rds On (Max) @ Id, Vgs :

250m Ω @ 7A, 10V

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Height :

15.75mm

Number of Pins :

3

Package / Case :

TO-220-3

Mount :

Through Hole

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

16ns

Lead Free :

Lead Free

Length :

10.4mm

Element Configuration :

Single

Base Part Number :

STP19N

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

56A

Terminal Finish :

Matte Tin (Sn)

Pin Count :

3

Gate to Source Voltage (Vgs) :

25V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Mounting Type :

Through Hole

Turn-Off Delay Time :

61 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Operating Temperature :

150°C TJ

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

500V

Resistance :

250mOhm

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Width :

4.6mm

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Vgs (Max) :

±25V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

14A

Avalanche Energy Rating (Eas) :

208 mJ