STP19NF20

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

160m Ω @ 7.5A, 10V

Series :

MESH OVERLAY™

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Height :

9.15mm

Turn On Delay Time :

11.5 ns

Transistor Element Material :

SILICON

Threshold Voltage :

3V

Resistance :

160mOhm

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Power Dissipation-Max :

90W Tc

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Package / Case :

TO-220-3

Mount :

Through Hole

Continuous Drain Current (ID) :

7.5A

Length :

10.4mm

JESD-609 Code :

e3

Rise Time :

22ns

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Base Part Number :

STP19N

Width :

4.6mm

Mounting Type :

Through Hole

Fall Time (Typ) :

11 ns

Drain to Source Breakdown Voltage :

200V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Turn-Off Delay Time :

19 ns

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

60A

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Power Dissipation :

90W

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

RoHS Status :

ROHS3 Compliant