STP19NB20

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Part Number :

STP19N

Drain to Source Breakdown Voltage :

200V

Packaging :

Tube

Series :

PowerMESH™

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

Matte Tin (Sn)

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

19A

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

10 ns

Power Dissipation :

125W

Number of Elements :

1

Drain-source On Resistance-Max :

0.18ohm

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

JESD-609 Code :

e3

Current Rating :

19A

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

180m Ω @ 9.5A, 10V

Avalanche Energy Rating (Eas) :

580 mJ

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Power Dissipation-Max :

125W Tc

ECCN Code :

EAR99

Voltage - Rated DC :

200V

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Vgs (Max) :

±30V

Rise Time :

15ns

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 25V

Pulsed Drain Current-Max (IDM) :

76A