STP190N55LF3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 30A, 10V

ECCN Code :

EAR99

Series :

STripFET™

Turn On Delay Time :

20 ns

Pulsed Drain Current-Max (IDM) :

480A

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

6200pF @ 25V

Avalanche Energy Rating (Eas) :

1000 mJ

Drain to Source Breakdown Voltage :

55V

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Power Dissipation :

312W

Turn-Off Delay Time :

160 ns

Vgs (Max) :

±18V

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Temperature :

-55°C~175°C TJ

Base Part Number :

STP190

Fall Time (Typ) :

40 ns

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 5V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

Power Dissipation-Max :

312W Tc

Terminal Finish :

Tin (Sn)

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Resistance :

3.7Ohm

Current - Continuous Drain (Id) @ 25°C :

120A Tc

JESD-609 Code :

e3

FET Type :

N-Channel

Radiation Hardening :

No

Packaging :

Tube

Continuous Drain Current (ID) :

120A

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

18V

Rise Time :

40ns

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V