STP18NM80

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Number of Elements :

1

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

2070pF @ 50V

Packaging :

Tube

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Threshold Voltage :

4V

Rise Time :

28ns

Number of Pins :

3

Pin Count :

3

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Resistance :

295mOhm

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Height :

15.75mm

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

190W Tc

Width :

4.6mm

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

800V

Continuous Drain Current (ID) :

17A

Avalanche Energy Rating (Eas) :

600 mJ

Radiation Hardening :

No

Series :

MDmesh™

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Mount :

Through Hole

ECCN Code :

EAR99

Fall Time (Typ) :

50 ns

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

68A

REACH SVHC :

No SVHC

Power Dissipation :

190W

Base Part Number :

STP18N

Length :

10.4mm

Turn-Off Delay Time :

96 ns

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Turn On Delay Time :

18 ns

Rds On (Max) @ Id, Vgs :

295m Ω @ 8.5A, 10V