STP18NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Length :

10.4mm

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

25V

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

13A

Base Part Number :

STP18N

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

290m Ω @ 6.5A, 10V

Mount :

Through Hole

Drain to Source Breakdown Voltage :

650V

Height :

15.75mm

Width :

4.6mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

15.5ns

Number of Pins :

3

Package / Case :

TO-220-3

Power Dissipation-Max :

110W Tc

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Series :

FDmesh™ II

ECCN Code :

EAR99

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1030pF @ 50V

Packaging :

Tube

Resistance :

290mOhm

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Drain to Source Voltage (Vdss) :

600V

FET Type :

N-Channel

Turn On Delay Time :

55 ns

Turn-Off Delay Time :

13 ns

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

52A

Fall Time (Typ) :

18 ns

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

187 mJ

Lead Free :

Lead Free

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

130W

Element Configuration :

Single