STP18NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Fall Time (Typ) :

25 ns

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 50V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Number of Terminations :

3

Package / Case :

TO-220-3

Base Part Number :

STP18N

Length :

10.4mm

Mounting Type :

Through Hole

Element Configuration :

Single

Transistor Application :

SWITCHING

Pin Count :

3

Continuous Drain Current (ID) :

13A

Power Dissipation :

110W

Transistor Element Material :

SILICON

Width :

4.6mm

Drain to Source Breakdown Voltage :

600V

Gate to Source Voltage (Vgs) :

25V

Series :

MDmesh™ II

Turn-Off Delay Time :

55 ns

Radiation Hardening :

No

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

52A

Turn On Delay Time :

12 ns

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Vgs (Max) :

±25V

Factory Lead Time :

16 Weeks

Resistance :

285mOhm

JEDEC-95 Code :

TO-220AB

Rise Time :

15ns

Threshold Voltage :

3V

Power Dissipation-Max :

110W Tc

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Height :

15.75mm

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

285m Ω @ 6.5A, 10V

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

FET Type :

N-Channel

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant